www.goodark.com page 1 of 4 rev.1.0 ssf 3314e 30v n-channel mosfet package marking and ordering information device marking device device package reel size tape width quantity SSF3314E SSF3314E dfn33-8l - - - absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 12 v i d 8 a drain current-continuous@ current-pulsed (note 1) i dm 45 a maximum power dissipation p d 1.7 w operating junction and storage temperature range t j ,t stg -55 to 150 thermal characteristics thermal resistance,junction-to-ambient (note 2) r ja 40 /w electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250a 30 v zero gate voltage drain current i dss v ds =30v,v gs =0v 1 a pin assignment dfn3 3-8l bottom view general features v ds = 30v,i d = 8a r ds(on) < 39m @ v gs =2.5v r ds(on) < 28m @ v gs =3.1v r ds(on) < 24m @ v gs =4.0v r ds(on) < 23m @ v gs =4.5v r ds(on) < 18m @ v gs =10v esd rating 2000v hbm high power and current handing capability lead free product surface mount package description the SSF3314E uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v while retaining a 12v v gs(max) rating. it is esd protected. this device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. schematic d iagram
www.goodark.com page 2 of 4 rev.1.0 ssf 3314e 30v n-channel mosfet gate-body leakage current i gss v gs =10v,v ds =0v 10 ua gate-source breakdown voltage bv gso v ds =0v, i g =250ua 12 v on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250a 0.6 1 1.5 v v gs =10v, i d =8a 14 18 v gs =4.5v, i d =6a 17 23 v gs =4.0v, i d =4a 18 24 v gs =3.1v, i d =4a 20 28 drain-source on-state resistance r ds(on) v gs =2.5v, i d =3a 23 39 m forward transconductance g fs v ds =5v,i d =8a 17 s dynamic characteristics (note4) input capacitance c lss 870 pf output capacitance c oss 130 pf reverse transfer capacitance c rss v ds =15v,v gs =0v, f=1.0mhz 100 pf gate resistance rg v ds =0v,v gs =0v, f=1.0mhz 1.5 switching characteristics (note 4) turn-on delay time t d(on) 4 ns turn-on rise time t r 10 ns turn-off delay time t d(off) 28 ns turn-off fall time t f v dd =15v,v gs =10v, r gen =3 r l =1.25 7 ns total gate charge q g 10.5 nc gate-source charge q gs 1.9 nc gate-drain charge q gd v ds =15v,i d =8a,v gs =4.5v 4.1 nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =1a 0.76 0.9 v diode forward current (note 2) i s 4.5 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production testing.
www.goodark.com page 3 of 4 rev.1.0 ssf 3314e 30v n-channel mosfet typical electrical and thermal characteristics square wave pluse duration(sec) figure 3: normalized maximum transient thermal impedance vgs rgen vin g vdd rl vout s d figure 1: switching test circuit v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms normalized effective transient thermal impedance
www.goodark.com page 4 of 4 rev.1.0 ssf 3314e 30v n-channel mosfet dfn33-8l package information common dimensions(mm) pkg. w very very thin ref. min. nom. max. a 0.70 0.75 0.80 a1 0.00 0.05 a3 0.2ref. d 2.95 3.00 3.05 e 2.95 3.00 3.05 b 0.25 0.30 0.35 l 0.30 0.40 0.50 d2 2.30 2.45 2.55 e2 2.50 1.65 1.75 e 0.65bsc notes 1. dimensions are inclusive of plating 2. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 6 mils. 3. dimension l is measured in gauge plane. 4. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. top view bottom view side view
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